Preparation of β-CuGaO2 thin films by ion-exchange of β-NaGaO2 film fabricated by a solgel method

β-CuGaO2 is a wurtzite-derived phase that promising for ferroelectric and photovoltaic applications. Its bandgap measured in the form of powders about 1.5 eV direct according to density functional theory calculations, making it an appropriate solar light absorber. In this work, we describe our attempts grow complex by pulsed laser deposition (PLD) resulted growing mostly CuGa2O4 on various crystal substrates such as SrTiO3 (STO), Al2O3 (ALO), ZnO, ZrO2:Y (9.5 mol%Y2O3) (YSZ). contrast, obtained using ion-exchange β-NaGaO2 film fabricated with cost-efficient spin coating solgel method, composed SiN c-Si (001) wafer. The potential different films discussed view applications surface photovoltage under white spectroscopy. While show suitable photon absorber, conclude fact are discontinuous detrimental electronic transport additional dopants must be inserted material promote its optoelectronic properties charge carrier transport.